6 research outputs found
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation
Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications
Following a remarkable success of
metallic spintronics, tremendous efforts have been invested into the
less developed semiconductor spintronics, in particular, with the
aim to produce three-terminal spintronic devices, e.g., spin transistors.
One of the most important prerequisites for such a technology is an
effective injection of spin-polarized carriers into a nonmagnetic
semiconductor, preferably one of those currently used for industrial
applications such as Siî—¸a workhorse of modern electronics.
Ferromagnetic semiconductor EuO is long believed to be the best candidate
for integration with Si. Although EuO proved to offer optimal conditions
for effective spin injection into silicon and in spite of considerable
efforts, the direct epitaxial stabilization of stoichiometric EuO
thin films on Si without any buffer layer has not been demonstrated
to date. Here we report a new technique for control of EuO/Si interface
on submonolayer level. Using this technique we solve a long-standing
problem of direct epitaxial growth on silicon of thin EuO films which
exhibit structural and magnetic properties of EuO bulk material. This
result opens up new possibilities in developing all-semiconductor
spintronic devices